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Introduction of RIIS and high-resolution photoelectron holography studies of heavily doped diamond

發(fā)布時(shí)間:2017-12-06 瀏覽:

講座題目:Introduction of RIIS and high-resolution photoelectron holography studies of heavily doped diamond

講座人:Prof. Takayoshi Yokoya

講座時(shí)間:10:00

講座日期:2017-12-6

地點(diǎn):長(zhǎng)安校區(qū) 致知樓二段三層報(bào)告廳(2307)

主辦單位:材料科學(xué)與工程學(xué)院

講座內(nèi)容:In this talk, Prof. Yokoya willintroduce Research Institute for Interdisciplinary Science (RIIS), OkayamaUniversity, and recent research about high-resolution holography studies ofheavily doped diamond. Searching superconductivity in materials composed oflight elements is one of strategies to discover high transition temperature (Tc) superconductivity. Dopeddiamond is one such candidate. Theoretically, a highTcwas expected in heavily phosphorus(P)-doped diamondbecause of higher density of states of the conduction band compared to that ofthe valence band. However, P-doped diamond doesn’t show metallic behavior. Inorder to investigate this phenomenon, they use photoelectron holography toobserve the local structure of dopant P atoms. Prof. Yokoya will presenthigh-resolution photoelectron holography on heavily P-doped diamond and discussthe three dimensional local structures surrounding dopant P atoms indifferentchemical sites.

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